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2SC3650 - Transistor

Key Features

  • High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 1.2 2.

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Full PDF Text Transcription (Reference)

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 1.