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2SC3650 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • Large current capacity (IC=1.2A).
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

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Other Datasheets by SANYO (now Panasonic)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications • LF amplifiers, various drivers, muting circuit. Features • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • Large current capacity (IC=1.2A). • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.