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2SC3651 - Transistor

Key Features

  • High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Collector Current (pulse) Collector Dissipation Junotion Temperature storage Temperature.
  • Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rat.

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Full PDF Text Transcription (Reference)

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Collector Current (pulse) Collector Dissipation Junotion Temperature storage Temperature *Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 120 100 15 200 300 500 1.