2SC3651 - NPN Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3651
Manufacturer	Sanyo Semicon Device
File Size	88.94 KB
Description	NPN Transistor
Datasheet	2SC3651 Datasheet
Additional preview pages of the 2SC3651 datasheet.

High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Puls.

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Published: Mar 22, 2005 |