2SC3651 Description
Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit.
2SC3651 Key Features
- High DC current gain (hFE=500 to 2000)
- High breakdown voltage (VCEO≥100V)
- Low collector-to-emitter saturation voltage
- High VEBO (VEBO≥15V)
- Very small size making it easy to provide high