Small Cob (Cob=1.5pF typ). +0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
High DC current gain (hFE=800 to 3200). 1 2
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Adoption of FBET process. Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V). 0.5V). 0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Co.
SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC3689
SOT-23
Unit: mm
Features
Small Cob (Cob=1.5pF typ).
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
High DC current gain (hFE=800 to 3200).
1 2
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Adoption of FBET process.
Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V).
0.5V).
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.