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2SC3689 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Small Cob (Cob=1.5pF).
  • Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer.
  • Adoption of MBIT process.
  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN1855B 2SC3689 SANYO Semiconductors DATA SHEET 2SC3689 NPN Epitaxial Planar Silicon Transistor High-hFE, Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers, muting circuit. Features • Small Cob (Cob=1.5pF). • Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer. • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). • High VEBO (VEBO≥15V).