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2SC4178 - NPN SILICON EPITAXIAL TRANSISTOR

Key Features

  • Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 4 20 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current gain.
  • Collector-emitter sat.

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SMD Type NPN Silicon Epitaxia 2SC4178 Transistors IC Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 4 20 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current gain * Collector-emitter saturation voltage * Gain bandwidth product Output capacitance Collector to base time constant Noise figure Symbol ICBO hFE Testconditons VCB = 30V, IE=0 VCE = 6V , IC = 1.0mA 40 90 0.1 400 600 1.0 12 3 Min Typ Max 100 180 0.