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2SC4179 Datasheet PDF

Kexin Electronics 2SC4179

NPN SILICON EPITAXIAL TRANSISTOR

Part No. 2SC4179
Datasheet 2SC4179 Download
Manufacturer Kexin Electronics
Description NPN SILICON EPITAXIAL TRANSISTOR
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2SC4179 datasheet page 1 preview

FEATURES

High gain bandwidth product. Low output capacitance. Low noise figure. 1 Emitter 2 Base 3 Collector

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 50 30 5 50 150 150 -55 to +150 Unit V V V mA mW

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Gain bandwidth product Output capacitance Collector to base time constant Noise figure *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 50V, IE=0 VEB = 5V, IC = 0 VCE = 6V , IC = 1.0mA VCE = 6V , IC = 1.0mA 60 0.65 100 0.70 0.08 150 250 1.9 10 2 2.2 15 4 Min Typ Max 0.1 0.1 180 0.75 0.3 V V MHz pF ps dB Unit ìA ìA VCE(sat) IC = 10mA, IB = 1.0mA fT Cob VCE = 6V, IE = -1.0mA VCE = 6V, IE = 0, f = 1MHz Cc'rb'...