Datasheet4U Logo Datasheet4U.com

2SC4413 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 15 100 200 20 150 150 -55 to +150 Unit V V V mA mA mA mW Electrica.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC4413 NPN Transistor Sanyo Semicon Device
2SC4410 Silicon NPN Transistor Panasonic Semiconductor
2SC4410G Silicon NPN Transistor Panasonic
2SC4411 PNP Transistor Sanyo Semicon Device
2SC4412 NPN Transistor Sanyo Semicon Device

Other Datasheets by Kexin Semiconductor

Part Number Description
2SC4412 NPN Triple Diffused Planar Silicon Transistor
2SC4409 Transistors
2SC4432 NPN Transistors
2SC4432-HF NPN Transistors
2SC4497 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob.