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2SC4413 - NPN Transistor

Key Features

  • Very small-sized package permitting the 2SC4413applied sets to be made small and slim.
  • Adoption of FBET process.
  • High DC current gain.
  • Low collector-to-emitter saturation voltage.
  • High VEBO.
  • Small Cob. 0.425 Package Dimensions unit:mm 2059B [2SC4413] 0.3 3 0.15 0.2 0~0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collec.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC4411 PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2923 NPN Epitaxial Planar Silicon Transistor 2SC4413 Low-Frequency General-Purpose Amplifier Applications Features · Very small-sized package permitting the 2SC4413applied sets to be made small and slim. · Adoption of FBET process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. · Small Cob. 0.425 Package Dimensions unit:mm 2059B [2SC4413] 0.3 3 0.15 0.2 0~0.1 2.1 1.250 0.425 12 0.65 0.65 2.