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2SC4505 Datasheet PDF

Kexin Electronics 2SC4505

NPN Epitaxial Planar Silicon Transistors

Part No. 2SC4505
Datasheet 2SC4505 Download
Manufacturer Kexin Electronics
Description NPN Epitaxial Planar Silicon Transistors
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2SC4505 datasheet page 1 preview

FEATURES

High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA.

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC Rating 400 400 7 0.1 0.2 CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=20ms,Duty=1/2 *2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg 0.5 2 150 -55 to 150 Unit V V V A A *1 W *2 W 1 Free Datasheet SMD Type 2SC4505

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEB...
2SC4505 page 2 preview