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SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors 2SC4505
Features
High breakdown voltage. (BVCEO = 400V) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA.
Absolute Maximum Ratings Ta = 25
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Symbol VCBO VCEO VEBO IC Rating 400 400 7 0.1 0.2 CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=20ms,Duty=1/2 *2 When mounted on a 40X40X0.7 mm ceramic board. PC TJ Tstg 0.5 2 150 -55 to 150 Unit V V V A A *1 W *2 W
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