Kexin Electronics 2SC4519
NPN Epitaxial Planar Silicon Transistor
FEATURES
+0.1 2.4-0.1 Adoption of FBET process. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 60 45 5 500 1 200 150 -55 to +150 Unit V V V mA A mW +0.1 0.38-0.1 0-0.1 1 Free Datasheet SMD Type 2SC4519ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VC...