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2SC4519 - NPN TRANSISTOR

Key Features

  • Adoption of FBET process.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • Small-sized package. Package Dimensions unit:mm 2018A [2SC4519] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Sym.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features · Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package. Package Dimensions unit:mm 2018A [2SC4519] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.