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2SC4667 - Silicon NPN Epitaxial Type Transistor

Key Features

  • High transition frequency: fT = 400 MHz (typ. ) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ. ) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 15 5 200 40 100 125 -55 to +125 Unit V V V mA mA mW Electrical C.

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SMD Type Silicon NPN Epitaxial 2SC4667 Transistors IC Features High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.