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2SC4666 - Silicon NPN Epitaxial Type Transistor

Key Features

  • High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Co.

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SMD Type Silicon NPN Epitaxial 2SC4666 Transistors IC Features High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, I