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2SC4666 Datasheet PDF

Kexin Electronics 2SC4666

Silicon NPN Epitaxial Type Transistor

Part No. 2SC4666
Datasheet 2SC4666 Download
Manufacturer Kexin Electronics
Description Silicon NPN Epitaxial Type Transistor
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2SC4666 datasheet page 1 preview

FEATURES

High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package 1 Emitter 2 Base 3 Collector

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 -55 to +125 Unit V V V mA mA mW

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA 600 0.12 100 250 3.5 0.5 0.3 Min Typ Max 0.1 0.1 3600 0.25 V MHz pF dB dB Unit ìA ìA VCE (sat) IC = 100 mA, IB = 10 mA fT Cob NF(1) VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz,Rg = 10 kÙ VCE = 6 V, IC = 0.1...