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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications Computer, Counter Applications
2SC4667
Unit: mm
• High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage Emitter-base voltage Collector current Base current
VCEO VEBO
IC IB
15 V 5V 200 mA 40 mA
Collector power dissipation Junction temperature Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
JEDEC JEITA
― SC-70
Note: Using continuously under heavy loads (e.g.
C4667 Datasheet
