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2SC5069 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature.
  • Mounted on ceramic board(250mm X0.8mm). 2 Symbol VCBO VCEO VEBO IC ICP IB PC.
  • Tj Tstg Rating 30 25 15 2 4 0.4 1.5 150 -55 to +.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm X0.8mm). 2 Symbol VCBO VCEO VEBO IC ICP IB PC * Tj Tstg Rating 30 25 15 2 4 0.4 1.5 150 -55 to +150 Unit V V V A A A W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.