Kexin Electronics 2SC5069
NPN Epitaxial Planar Silicon Transistor
FEATURES
High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm X0.8mm). 2 Symbol VCBO VCEO VEBO IC ICP IB PC * Tj Tstg Rating 30 25 15 2 4 0.4 1.5 150 -55 to +150 Unit V V V A A A W 1 Free Datasheet SMD Type 2SC5069ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-ON Time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 10 V, IC=0 VCE = 5 V , IC = 500 mA VCE = 5 V ,...