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2SC5069 - NPN TRANSISTOR

Datasheet Summary

Features

  • High current capacity.
  • Adoption of MBIT process.
  • High DC current gain.
  • Low collector-to-emitter saturation voltage.
  • High VEBO. Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Tempe.

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Datasheet Details

Part number 2SC5069
Manufacturer Sanyo Semicon Device
File Size 104.58 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5069 Datasheet
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Ordering number:EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features · High current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage. · High VEBO. Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Mounted on ceramic board (250mm2× 0.8mm) 0.
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