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2SD1252 - Silicon NPN Transistor

Key Features

  • Power transistors. +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1252 2SD1252A Collector-emitter voltage 2SD1252 2SD1252A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Tc = 25 Junction temperatur.

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Other Datasheets by Kexin Semiconductor

Part Number Description
2SD1252A Silicon NPN Transistor
2SD1250 Silicon NPN Transistor
2SD1251 Silicon NPN Transistor
2SD1251A Silicon NPN Transistor
2SD1253 Silicon NPN Transistor

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SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Power transistors. +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1252 2SD1252A Collector-emitter voltage 2SD1252 2SD1252A Emitter-base voltage Collector current Peak collector current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP PC VCEO Symbol VCBO Rating 60 80 60 80 6 3 5 1.3 35 150 -55 to +150 Unit V V V V V A A W W 3 .8 0 www.kexin.com.