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2SD1253A - Silicon NPN triple diffusion planar Power Transistor

Key Features

  • q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1253 base voltage 2SD1253A VCBO 60 80 V Collector to 2SD1253 emitter voltage 2SD1253A VCEO 60 80 V Emitter to base voltage Peak collector curr.

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Datasheet Details

Part number 2SD1253A
Manufacturer Panasonic
File Size 45.78 KB
Description Silicon NPN triple diffusion planar Power Transistor
Datasheet download datasheet 2SD1253A Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1253 base voltage 2SD1253A VCBO 60 80 V Collector to 2SD1253 emitter voltage 2SD1253A VCEO 60 80 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VEBO ICP IC PC 5 8 4 40 1.