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2SD1250A - Silicon NPN triple diffusion planar type Power Transistor

Key Features

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  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Low collector-emitter saturation voltage VCE(sat).
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
  • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage 2SD1250 (Base open) 2SD1250A VCBO VCEO 200 150 180 Emitter-base voltage (Collector ope.

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Datasheet Details

Part number 2SD1250A
Manufacturer Panasonic
File Size 74.92 KB
Description Silicon NPN triple diffusion planar type Power Transistor
Datasheet download datasheet 2SD1250A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A 8.5±0.2 6.0±0.2 Unit: mm 3.4±0.3 1.0±0.1 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 1.5–+00.4 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.