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2SD1253A - Silicon NPN Transistor

Download the 2SD1253A datasheet PDF. This datasheet also covers the 2SD1253 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector to emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1253 2SD1253A Collector-emitter voltage 2SD1253 2SD1253A Emitter-base voltage Collector current Peak collector current Colle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD1253_Kexin.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High forward current transfer ratio hFE which has satisfactory linearity. +0.2 9.70 -0.2 Low collector to emitter saturation voltage VCE(sat). +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.