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2SD1328 - Silicon NPN Epitaxial Planar Type Transistors

Key Features

  • Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat). High foward current transfer ratio hFE. 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 1 0.5 200 150 -55 to +150 Unit V V V A A mW 0-0.1 +0.10.38 -0.1 +0.10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type TransistIoCrs Silicon NPN Epitaxial Planar Type 2SD1328 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 Features Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat). High foward current transfer ratio hFE. 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 1 0.5 200 150 -55 to +150 Unit V V V A A mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.