0.95
q q q
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg
25 20 12 1 0.5 200 150.
55 ~ +150
V V V A A mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO.
236 EIAJ:SC.
59 Mini Type Package
Marking symbol : 1D
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage.
The following content is an automatically extracted verbatim text
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Transistor
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
0.65±0.15
Unit: mm
2.8 –0.3
+0.2
1.5 –0.05
+0.25
0.65±0.15
s Features
0.95
q q q
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO ICP IC PC Tj Tstg
25 20 12 1 0.