Kexin Electronics 2SD1628
NPN Epitaxial Planar Silicon Transistor
FEATURES
Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 20 6 5 8 500 1.5 150 -55 to +150 Unit V V V A A mW W 1 Free Datasheet SMD Type 2SD1628ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Storage time Turn-off time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 5 V, IC=0 VCE = 2 V , I...