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2SD1628 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature.
  • Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC.
  • Tj Tstg Rating 60 20 6 5 8 500 1.5 150 -55 to +150 Uni.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 20 6 5 8 500 1.5 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.