onsemi 2SD1628
The 2SD1628 is classified by 0.5 A hFE as follows : Rank E F G hFE 120 to 200 160 to 320 280 to 560 Switching Time Test Circuit PW = 10 ms IB1 D.C.FEATURES
● Low Saturation Voltage● High hFE
● Large Current Capacity
● Very Small Size Making it Easy to Provide High−Density Small−Sized Hybrid IC’s
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Strobe DC−DC Converters, Relay Drivers, Hammer Drivers, Lamp Drivers, Motor Drivers SPECIFICATIONSABSOLUTE MAXIMUM RATINGS
at Ta = 25°C Parameter Symbol Value Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC 60 V 20 V 6 V 5 A 8 A 500 mW 1.5 (Note 1) W Junction Temperature TJ 150 °C Storage Temperature TSTG −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When mounted on ceramic substrate (250 mm2 x 0.8 mm). DATA SHEET 1 2 3 SOT−89 / PCP−1 CASE 419AU ELECTRICAL CONNECTION 2 1 3 1: Base 2: Collector 3: Emitter MARKING DIAGRAM DK LOT No.