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2SD1781K - Medium Power Transistor

Key Features

  • Very Low VCE(sat). VCE(sat) = -0.1V(Typ. ) IC / IB= 500mA / 50mA High current capacity in compact package. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current.
  • Collector power dissipation Junction temperature Storage temperature.
  • Single pulse Pw=100ms.

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SMD Type TransistIoCrs Medium Power Transistor 2SD1781K Features Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA High current capacity in compact package. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current * Collector power dissipation Junction temperature Storage temperature * Single pulse Pw=100ms.