2SD1781K
2SD1781K is NPN EPITAXIAL SILICON TRANSISTOR manufactured by WEJ.
RoHS 2SD1781K
SOT-23-3L
2SD1781K TRANSISTOR (NPN)
DFeatures
Power dissipation
TPCM: .,LCollector current
200 mW (Tamb=25℃)
1. 9
0. 95¡ À0. 025
1. 02
0. 35 2. 92¡ À0. 05
ICM℃
0.8 A
OCollector-base voltage
V(BR)CBO:
40 V
COperating and storage junction temperature range
TJ Tstg: -55℃ to +150℃
1. BASE 2. EMITTER 3. COLLECTOR
2. 80¡ À0. 05 1. 60¡ À0. 05
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current
Emitter cut-off current
CDC current gain ECollector-emitter saturation voltage LTransition frequency ECollector output...
