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2SD1781K - NPN EPITAXIAL SILICON TRANSISTOR

Key Features

  • Power dissipation TPCM: . ,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. BASE 2.

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Datasheet Details

Part number 2SD1781K
Manufacturer WEJ
File Size 136.36 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD1781K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RoHS 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0.