Download 2SD1949 Datasheet PDF
Kexin Semiconductor
2SD1949
Features High current.(IC=5A) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150m A / 15m A. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol Rating Unit VCBO VCEO VEBO Tj Tstg -55 to +150 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency h FE Classification Marking Rank h FE 120 270 180 390 Symbol Testconditons BVCBO IC=1m A BVCEO VCB=30V BVEBO VEB=4V ICBO VCE/IC=3V/0.01A IEBO VCE=5V , IE= -20m A , f=100MHz h FE VCB=10V , IE=0A , f=1MHz VCE(sat) IC=100ìA f T IE=100ìA Cob...