Kexin Electronics 2SD1997
NPN Transistors
FEATURES
● Low saturation voltage.● Large current capacity.
● Complementary to 2SB1323 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base-to-emitter on state voltage DC current gain Diode forwad voltage Base-to-emitter resistance Base resistance Collector output capacitance Transition frequency● Marking Marking DO Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 40 30 6 3 5 1.5 150 -55 to 150 Symbol Test Conditions VCBO Ic= 100 μA, IE= 0 VCEO Ic= 10 mA,...