Sanyo Electric 2SD1997
Epitaxial Planar Silicon Transistor
| Part No. | 2SD1997 |
|---|---|
| Datasheet | 2SD1997 Download |
| Manufacturer |  Sanyo Electric |
| Description | Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Contains input resistance (R1), base-to-emitter resistance (RBE).● Contains diode between collector and emitter.
● Low saturation voltage.
● Large current capacity.
● Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1323/2SD1997] ( ) : 2SB1323 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions (Mounted on ceramic board 250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO hFE1 hFE2 fT Cob VCE(sat) VCB=(–)30V, IE=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)2A VCE=(–)2V, IC=(–)0.5A VCB=(–)10V, f=1M...
