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2SJ166 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-50V.
  • ID =-0.1 A (VGS =-10V).
  • RDS(ON) ＜ 50Ω (VGS =-4V).
  • Comp;ementary to 2SK1132 P-Channel MOSFET 2SJ166 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power.

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SMD Type MOSFET ■ Features ● VDS (V) =-50V ● ID =-0.1 A (VGS =-10V) ● RDS(ON) ＜ 50Ω (VGS =-4V) ● Comp;ementary to 2SK1132 P-Channel MOSFET 2SJ166 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Power Dissipation Junction Temperature Junction Storage Temperature Range Note.