2SJ166 Datasheet and Specifications PDF

2SJ166-VB 2SJ166-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 3 at VGS = - 10 V VGS(th) (V) - 1 to - 3 ID (mA) -500 FEATURES • Halogen-fre.

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* High-Side Switching
* Low On-Resistance: 3 
* Low Threshold: - 2 V (typ.)
* Fast Swtiching Speed: 20 ns (typ.)
* Low Input Capacitance: 20 pF (typ.)
* Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D S .

SMD Type MOSFET ■ Features ● VDS (V) =-50V ● ID =-0.1 A (VGS =-10V) ● RDS(ON) ＜ 50Ω (VGS =-4V) ● Comp;ementary to 2SK1132 P-Channel MOSFET 2SJ166 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.

* VDS (V) =-50V
* ID =-0.1 A (VGS =-10V)
* RDS(ON) ＜ 50Ω (VGS =-4V)
* Comp;ementary to 2SK1132 P-Channel MOSFET 2SJ166 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.2 2.8 -0.1 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 0-0.1 +0.1 0.68 -0.1 .

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