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2SJ3001DS - P-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) =-20V ƽ RDS(ON) ˘ 100m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 150m¡ (VGS =-2.5V) G1 S2 3D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150ć).
  • 1 Ta=25ć Ta=70ć Pulsed Drain Current.
  • 2 Power Dissipation.
  • 1.

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SMD Type P-Channel Enhancement MOSFET 2SJ3001DS MOSFET Ƶ Features ƽ VDS (V) =-20V ƽ RDS(ON) ˘ 100m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 150m¡ (VGS =-2.5V) G1 S2 3D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150ć)*1 Ta=25ć Ta=70ć Pulsed Drain Current *2 Power Dissipation *1 Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Surface Mounted on FR4 Board, t İ 5 sec.