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2SJ3031DS - P-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) =-30V ƽ ID =-4.2 A (VGS =-10V) ƽ RDS(ON) ˘ 5m¡ (VGS =-10V) ƽ RDS(ON) ˘ m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 120m¡ (VGS =-2.5V) D G S    627       3 1 2            1.6       8QLW PP    .
  • DWH 6RXUFH 'UDLQ Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25ć Ta = 70ć Pulsed Drain.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type P-Channel Enhancement MOSFET 6-'6 MOSFET Ƶ Features ƽ VDS (V) =-30V ƽ ID =-4.2 A (VGS =-10V) ƽ RDS(ON) ˘ 5m¡ (VGS =-10V) ƽ RDS(ON) ˘ m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 120m¡ (VGS =-2.5V) D G S    627       3 1 2            1.6       8QLW PP    *DWH 6RXUFH 'UDLQ Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25ć Ta = 70ć Pulsed Drain Current Power Dissipation Ta = 25ć Ta = 70ć Thermal Resistance.Junction- to-Ambient t İ 10s Thermal Resistance.Junction- to-Ambient Thermal Resistance.