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2SJ303-VB
2SJ303-VB Datasheet
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration
-60
V
62
mΩ
74
mΩ
-40
A
Single
FEATURES
• Trench Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch
TO-220AB
S G
www.VBsemi.com
GD S Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
-40 -30
Pulsed Drain Current
IDM
- 90
A
Continuing Source Current (Diode Conduction)
IS
- 30
Avalanche Current
IAS
- 28
Single Pulse Avalanche Energy Maximum Power Dissipation
L = 0.1 mH
EAS
7.
2SJ303 Datasheet
