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2SJ304-VB
2SJ304-VB Datasheet P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.100 at V GS = - 10 V - 60
0.120 at VGS = - 4.5 V
ID (A) - 20 - 15
Qg (Typ) 12.5
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • Load Switch
www.VBsemi.com
TO-220 FULLPAK
S G
GDS
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
- 20 - 12
Pulsed Drain Current
IDM
- 60
A
Continuing Source Current (Diode Conduction)
IS
- 12
Avalanche Current
IAS
- 12
Single Pulse Avalanche Energy Maximum Power Dissipation
L = 0.1 mH
EAS
7.
2SJ304 Datasheet
