VBsemi Electronics 2SJ304
60V P-Channel MOSFET
| Part No. | 2SJ304 |
|---|---|
| Datasheet | 2SJ304 Download |
| Manufacturer | VBsemi Electronics |
| Description | 60V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % UIS Tested
APPLICATIONS
● Load Switch TO-220 FULLPAK S G GDS D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 20 - 12 Pulsed Drain Current IDM - 60 A Continuing Source Current (Diode Conduction) IS - 12 Avalanche Current IAS - 12 Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH EAS 7.2 mJ TC = 25 °C TA = 25 °C PD 30a 2b W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 20 62 5 Maximum 25 75 6 Unit °C/W 1 2SJ304-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate T...
