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2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8 to −2.
J304 Datasheet
