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J304
J304
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as low ON resistance analog switching.
• Sourced from process 50.
1 TO-92 1. Drain 2. Source 3. Gate
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings 30 -30 10
-55 ~ 150
NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits.
J304 Datasheet
