The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3 GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C Derate above 25°C
VDG VGS
IG PD
– 30
– 30
10 350 2.8
Lead Temperature (1/16″ from Case for 10 Seconds)
TL 300
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current (VGS = –20 Vdc, VDS = 0)
Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.
J304 Datasheet
