Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSIV)
DC- DC Converter, Relay Drive and Motor Drive Applications
Unit: mm z 4-V gate drive z Low drain- source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS =
- 100 μA (max) (VDS =
- 60 V) z Enhancement mode : Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1...
