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2SJ3047DS - P-Channel Enhancement MOSFET

Key Features

  • VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) D    627       3 1 2       G S Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Themal Resistance. Junction-to-Ambient Themal Resistance. Junction-to-Case Junction and Storage Temperature Range.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type P-Channel Enhancement MOSFET 6-'6 MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) D    627       3 1 2       G S Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Themal Resistance. Junction-to-Ambient Themal Resistance. Junction-to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ, TSTG Rating -30 20 -2.6 -2.2 -20 1.4 1 125 80 -55 to 150 Unit V V A W /W /W      1.