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2SJ319S - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-200V.
  • ID =-3 A (VGS =-10V).
  • RDS(ON) ＜ 2.3Ω (VGS =-10V).
  • High speed switching.
  • Low drive current P-Channel MOSFET 2SJ319S TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +0 9.70 .2 -0.2 D G S + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 + 5.55 0.15 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source 4 Drain.
  • Absolute Maximum Ratings Ta.

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SMD Type MOSFET ■ Features ● VDS (V) =-200V ● ID =-3 A (VGS =-10V) ● RDS(ON) ＜ 2.3Ω (VGS =-10V) ● High speed switching ● Low drive current P-Channel MOSFET 2SJ319S TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 +0 1.50 .15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +0 9.70 .2 -0.2 D G S + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 + 5.55 0.15 -0.15 3.80 Unit: mm 1 Gate 2 Drain 3 Source 4 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current （Note.1) Body to Drain Diode Reverse Drain Current Power Dissipation Tc = 25℃ Junction Temperature Junction Storage Temperature Range Note.