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Ordering number:EN4309
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
P-Channel Silicon MOSFET
2SJ316
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SJ316]
4.5 1.6
1.5
1.0 2.5 4.25max
0.4 0.5
32 1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Conditions
PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.
2SJ316 Datasheet
