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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S (typ.) z Complementary to 2SK2013
2SJ313
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
−180 ±20 −1 25 150 −55~150
V V A W °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.
2SJ313 Datasheet
