Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSIV)
DC- DC Converter, Relay Drive and Motor Drive Applications
Unit: mm l 4 V gate drive l Low drain- source ON resistance : RDS (ON) = 80 mΩ (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.) l Low leakage current : IDSS =
- 100 µA (max) (VDS =
- 60 V) l Enhancement- mode : Vth =
- 0.8~- 2.0 V (VDS =
- 10 V, ID =
- 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS VDGR VGSS
ID IDP PD...