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2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ312
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) l Enhancement−mode : Vth = −0.8~−2.
2SJ312 Datasheet
