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2SJ315 Datasheet P-channel MOSFET

Manufacturer: Toshiba

Overview: 2SJ315 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ315 DC−DC Converter Unit:.

Key Features

  • z 4.
  • Volt gate drive z Low drain.
  • source ON resistance : RDS (ON) = 0.25 Ω (typ. ) z High forward transfer admittance : |Yfs| = 3.0 S (typ. ) z Low leakage current : IDSS =.
  • 100 µA (max) (VDS =.
  • 60 V) z Enhancement mode : Vth =.
  • 0.8~.
  • 2.0 V (VDS =.
  • 10 V, ID =.
  • 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain.
  • source voltage Drain.
  • gate voltage (RGS = 20 kΩ) Gate.
  • source volt.

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