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2SJ315
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ315
DC−DC Converter
Unit: mm
FEATURES
z 4− Volt gate drive z Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
−60 −60 ±20 −5 −20 20 150 −55~150
V V V
A
W °C °C
Note: Using continuously under heavy loads (e.
2SJ315 Datasheet
