Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSIV)
DC- DC Converter
Unit: mm
Features z 4- Volt gate drive z Low drain- source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS =
- 100 µA (max) (VDS =
- 60 V) z Enhancement mode : Vth =
- 0.8~- 2.0 V (VDS =
- 10 V, ID =
- 1...