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2SJ602-ZJ - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-20A.
  • RDS(ON) ＜ 73m Ω (VGS =-10V).
  • RDS(ON) ＜ 107mΩ (VGS =-4V).
  • Low Ciss: Ciss = 1300 pF (TYP. ) Drain Gate Body Diode Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Single Avalanche Energy (Note.2) Junction Temperature Junction Storage Temperature Range Symbol Rati.

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SMD Type P-Channel MOSFET 2SJ602-ZJ MOSFET ■ Features ● VDS (V) =-60V ● ID =-20A ● RDS(ON) ＜ 73m Ω (VGS =-10V) ● RDS(ON) ＜ 107mΩ (VGS =-4V) ● Low Ciss: Ciss = 1300 pF (TYP.) Drain Gate Body Diode Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Single Avalanche Current (Note.2) Power Dissipation Single Avalanche Energy (Note.2) Junction Temperature Junction Storage Temperature Range Symbol Rating Unit VDS -60 V VGS ±20 ID -20 IDM -50 A IAS -20 40 PD W 1.5 EAS 40 mJ TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0 www.kexin.com.