Datasheet4U Logo Datasheet4U.com

2SJ603-ZJ - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-60V.
  • ID =-25A.
  • RDS(ON) ＜ 48mΩ (VGS =-10V).
  • RDS(ON) ＜ 75mΩ (VGS =-4V).
  • Low Ciss: Ciss = 1900 pF (TYP. ) Drain Gate Body Diode Gate Protection Diode Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±20 Continuous Drain Current ID -25 Pulsed Drain Current (Note.1) IDM -70 A Single Avalanche Current (Note.2) IAS -25 Power Dissipation Tc = 25℃ 50 PD W.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ603 MOS FIELD EFFECT TRANSISTOR NEC
2SJ603 60V P-Channel MOSFET VBsemi
2SJ600 P-Channel Power MOSFET NEC
2SJ601 P-Channel Power MOSFET NEC
2SJ601 P-CHANNEL POWER MOSFET Renesas

Other Datasheets by Kexin Semiconductor

Part Number Description
2SJ603 MOS Field Effect Transistor
2SJ600 MOSFET
2SJ600-Z P-Channel MOSFET
2SJ601 MOS Field Effect Transistor
2SJ602 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type P-Channel MOSFET 2SJ603-ZJ MOSFET ■ Features ● VDS (V) =-60V ● ID =-25A ● RDS(ON) ＜ 48mΩ (VGS =-10V) ● RDS(ON) ＜ 75mΩ (VGS =-4V) ● Low Ciss: Ciss = 1900 pF (TYP.) Drain Gate Body Diode Gate Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -60 V VGS ±20 Continuous Drain Current ID -25 Pulsed Drain Current (Note.1) IDM -70 A Single Avalanche Current (Note.2) IAS -25 Power Dissipation Tc = 25℃ 50 PD W Ta = 25℃ 1.5 Single Avalanche Energy (Note.2) EAS 62.5 mJ Junction Temperature Junction Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Note.1: PW ≤ 10us,Duty Cycle ≤ 1% Note.2: Starting TJ = 25 °C,VDD=-30V, RG = 25Ω , VGS = –20 V → 0 www.kexin.com.