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2SJ603

Manufacturer: NEC (now Renesas Electronics)

2SJ603 datasheet by NEC (now Renesas Electronics).

2SJ603 datasheet preview

2SJ603 Datasheet Details

Part number	2SJ603
Datasheet	2SJ603_NEC.pdf
File Size	115.96 KB
Manufacturer	NEC (now Renesas Electronics)
Description	MOS FIELD EFFECT TRANSISTOR

2SJ603 Overview

The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

2SJ603 Key Features

Super low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = -10 V, ID = -13 A) RDS(on)2 = 75 mΩ MAX. (VGS = -4.0 V, ID =
Low input capacitance: Ciss = 1900 pF TYP. (VDS = -10 V, VGS = 0 V)
Built-in gate protection diode

2SJ603 from other manufacturers

View 2SJ603 datasheet index

Brand Logo	Part Number	Description	Other Manufacturers
	2SJ603	MOS Field Effect Transistor	Kexin
	2SJ603	60V P-Channel MOSFET	VBsemi
	2SJ603-ZJ	P-Channel MOSFET	Kexin

More Datasheets from NEC (now Renesas Electronics)

View all NEC (now Renesas Electronics) datasheets

Part Number	Description
2SJ600	P-Channel Power MOSFET
2SJ601	P-Channel Power MOSFET
2SJ602	MOS FIELD EFFECT TRANSISTOR
2SJ604	P-Channel Power MOSFET
2SJ605	MOS FIELD EFFECT TRANSISTOR
2SJ606	MOS FIELD EFFECT TRANSISTOR
2SJ607	MOS FIELD EFFECT TRANSISTOR
2SJ621	MOS FIELD EFFECT TRANSISTOR
2SJ624	MOS FIELD EFFECT TRANSISTOR
2SJ625	MOS FIELD EFFECT TRANSISTOR

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